Comment on China scientists develop flash memory 10,000× faster than current tech

CouncilOfFriends@slrpnk.net ⁨1⁩ ⁨week⁩ ago

By tuning the “Gaussian length” of the channel, the team achieved two‑dimensional super‑injection, which is an effectively limitless charge surge into the storage layer that bypasses the classical injection bottleneck.

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